Semiconductor device

摘要

To increase the degree of integration of a semiconductor device such as a DCDC converter. In a semiconductor device (e.g., DCDC converter) including a controller circuit and a switching transistor, the switching transistor formed using an oxide semiconductor layer is stacked over a substrate on which the controller circuit is formed. The switching transistor includes a backgate to release heat generated in the oxide semiconductor layer. The backgate has electrical conduction with a wiring to release heat and prevent a temperature increase with integration. Moreover, for power saving, a potential hold portion including a transistor and a capacitor may be formed using part of the oxide semiconductor layer over the controller circuit. The potential hold portion is formed in a circuit for generating a bias potential in the controller circuit.

主权项

1. A semiconductor device comprising:
a substrate comprising a semiconductor material; a controller circuit comprising a first transistor, the first transistor comprising a channel formation region in the substrate; and a second transistor, a channel formation region of the second transistor comprising an oxide semiconductor layer, wherein the controller circuit is configured to supply a signal to a first gate of the second transistor, wherein the second transistor is stacked over the first transistor with an insulating film provided therebetween, wherein the second transistor comprises a second gate overlapping with the first gate, and wherein the second gate is electrically connected to the substrate via at least one wiring and one contact plug.