摘要 |
Disclosed is a semiconductor light emitting device comprising multiple semiconductor layers including a first semiconductor layer, a second semiconductor layer and an active layer, a first electrode part, a second electrode part, and an insulation reflection layer which is formed on the multiple semiconductor layers and reflects light from the active layer. At least one of the first electrode part and the second electrode part comprises a first upper electrode formed on the insulation reflection layer, a first branch electrode which is branched to the outside of the first upper electrode under the first upper electrode, a first electrical connection which passes through the insulation reflection layer and connects the first upper electrode to the first branch electrode, and a second electrical connection which passes through the insulation reflection layer, electrically connects the first upper electrode and the multiple semiconductor layers, and deviates from a line extended from the first branch electrode. According to the present invention, an optical absorption loss due to metal is reduced. |