发明名称 Memory cells having a self-aligning polarizer
摘要 Spin torque transfer memory cells and methods of forming the same are described herein. As an example, spin torque transfer memory cells may include a self-aligning polarizer, a pinned polarizer, and a storage material formed between the self-aligning polarizer and the pinned polarizer.
申请公布号 US9344345(B2) 申请公布日期 2016.05.17
申请号 US201414219748 申请日期 2014.03.19
申请人 Micron Technology, Inc. 发明人 Harms Jonathan D.;Chen Wei;Murthy Sunil S.
分类号 H01L29/82;H04L12/26;H01L43/12 主分类号 H01L29/82
代理机构 Brooks, Cameron & Huebsch, PLLC 代理人 Brooks, Cameron & Huebsch, PLLC
主权项 1. A spin torque transfer memory cell, comprising: a self-aligning polarizer; a pinned polarizer; a storage material formed between the self-aligning polarizer and the pinned polarizer; and a non-magnetic material formed between the storage material and the self-aligning polarizer, wherein the self-aligning polarizer is configured to have a first magnetic orientation parallel to a magnetic orientation of the pinned polarizer and a second magnetic orientation perpendicular to the magnetic orientation of the pinned polarizer.
地址 Boise ID US