发明名称 |
Memory cells having a self-aligning polarizer |
摘要 |
Spin torque transfer memory cells and methods of forming the same are described herein. As an example, spin torque transfer memory cells may include a self-aligning polarizer, a pinned polarizer, and a storage material formed between the self-aligning polarizer and the pinned polarizer. |
申请公布号 |
US9344345(B2) |
申请公布日期 |
2016.05.17 |
申请号 |
US201414219748 |
申请日期 |
2014.03.19 |
申请人 |
Micron Technology, Inc. |
发明人 |
Harms Jonathan D.;Chen Wei;Murthy Sunil S. |
分类号 |
H01L29/82;H04L12/26;H01L43/12 |
主分类号 |
H01L29/82 |
代理机构 |
Brooks, Cameron & Huebsch, PLLC |
代理人 |
Brooks, Cameron & Huebsch, PLLC |
主权项 |
1. A spin torque transfer memory cell, comprising:
a self-aligning polarizer; a pinned polarizer; a storage material formed between the self-aligning polarizer and the pinned polarizer; and a non-magnetic material formed between the storage material and the self-aligning polarizer, wherein the self-aligning polarizer is configured to have a first magnetic orientation parallel to a magnetic orientation of the pinned polarizer and a second magnetic orientation perpendicular to the magnetic orientation of the pinned polarizer. |
地址 |
Boise ID US |