Silicon controlled rectifier

摘要

A silicon controlled rectifier includes a substrate, a well, a deep doped region, a first doped region, a second doped region, a third doped region, and a fourth doped region. The well is disposed on the substrate and underneath a cell region. The deep doped region is disposed in the well. The first doped region has a first conductivity type, and is disposed in the well. The second doped region and third doped region have the first conductivity type and are disposed on the deep doped region. The fourth doped region has a second conductivity type, and is disposed between the second doped region and the third doped region. The fourth doped region is disposed on the deep doped region, and is electrically isolated from the well through the deep doped region, the second doped region, and the third doped region.

主权项

1. A silicon controlled rectifier, comprising:
a substrate; a well disposed on the substrate and underneath a cell region; a first deep doped region disposed in the well; a first doped region having a first conductivity type, wherein the first doped region is disposed in the well, and is coupled to an anode of the silicon controlled rectifier; a second doped region having the first conductivity type, wherein the second doped region is disposed on the first deep doped region; a third doped region having the first conductivity type, wherein the third doped region is disposed on the first deep doped region; and a fourth doped region having a second conductivity type, wherein the fourth doped region is disposed between the second doped region and the third doped region, and is coupled to a cathode of the silicon controlled rectifier; wherein the fourth doped region is disposed on the first deep doped region, and is electrically isolated from the well through the first deep doped region, the second doped region, and the third doped region.