Semiconductor light emitting device

摘要

A light emitting device includes a first layer of a first conductivity type, a second layer of a second conductivity type, and a light emitting layer between the first and second layers. A resin layer is disposed on a first surface of the first layer. The first layer has an outer portion that extends beyond the second and light emitting layers to an outer edge. A first electrode contacts the first layer in the outer portion on a second surface opposite the first surface; and a second electrode contacts the second layer. A first insulating material contacts the first surface in the outer portion of the first layer and has a wall surface extending from the first surface at a position that is in the outer portion and spaced from the outer edge.

主权项

1. A light emitting device, comprising:
a first layer of a first conductivity type and a second layer of a second conductivity type; a light emitting layer between, in a first direction, the first and second layers, a resin layer on a first surface of the first layer such that the first layer is between the resin layer and the second layer in the first direction, the first layer having an outer portion extending beyond the second layer and light emitting layers in a second direction perpendicular to the first direction to an outer edge of the first layer; a first electrode contacting the first layer in the outer portion on a second surface opposite the first surface; a second electrode contacting the second layer; and a first insulating material contacting the first surface in the outer portion of the first layer and having a wall surface extending in the first direction from the first surface at a position that is in the outer portion and spaced in the second direction from the outer edge.