Semiconductor device

摘要

In order to provide a semiconductor device having a high ESD tolerance, a source wiring (32a) is formed on a gate (31) and a source (32) in a region of an NMOS transistor (30). The source wiring (32a) electrically connects the gate (31), the source (32), and a ground terminal. A drain wiring (33a) is formed on a drain (33) in the region of the NMOS transistor (30) . The drain wiring (33a) electrically connects the drain (33) and a pad (20) serving as an external connection electrode. Moreover, in the region of the NMOS transistor (30), the drain wiring (33a) has the same wiring width as the source wiring (32a).

主权项

1. A semiconductor device, comprising:
a multi-finger NMOS transistor formed by combining fingers having a same shape, the multi-finger NMOS transistor comprising:
a plurality of source regions and a plurality of drain regions alternately arranged on a surface of a semiconductor substrate;a plurality of channel regions each arranged between one of the plurality of source regions and one of the plurality of drain regions; anda gate electrode formed above each of the plurality of channel regions; a source wiring formed on the gate electrode and the plurality of source regions in a region of the multi-finger NMOS transistor, for electrically connecting the gate electrode, the plurality of source regions, and a ground terminal; and a drain wiring formed on the plurality of drain regions in the region of the multi-finger NMOS transistor, for electrically connecting the plurality of drain regions and a pad serving as an external connection electrode, each of the fingers of the multi-finger NMOS transistor having a same resistance value when equally-divided in a channel width direction.