Method of forming patterned layer, method of forming patterned photoresist layer, and active device array substrate

摘要

An exposure apparatus is provided and adapted for exposing a photoresist layer on a layer to form a plurality of strip exposed patterns. The exposure apparatus includes a light source, a lens group and a mask. The lens group is disposed between the photoresist layer and the light source and includes a plurality of strip lens parallel to each other, wherein an overlapping region between any two neighboring strip lens is defined as a lens connecting region, and the other regions excluding the lens connecting regions are defined as lens regions. The mask is disposed between the photoresist layer and the lens group and includes a plurality of shielding patterns, wherein an outline of the shielding patterns corresponds to the strip exposed patterns, each shielding pattern has a strip opening, and an extension direction of the strip openings is substantially parallel to an extension direction of the shielding patterns.

主权项

1. A method of forming a patterned layer, comprising:
forming a photoresist layer on a layer; disposing the layer with the photoresist layer formed thereon in an exposure apparatus, wherein the exposure apparatus exposes the photoresist layer on the layer to form a plurality of strip exposed patterns on the layer, and the exposure apparatus comprising:
a light source;a lens group disposed between the photoresist layer and the light source, the lens group comprising a plurality of strip lenses arranged parallel to each other, wherein an overlapping region between any two neighboring strip lenses is defined as a lens connecting region, and the other regions excluding the lens connecting regions are defined as a plurality of lens regions;a mask disposed between the photoresist layer and the lens group, wherein the mask has a plurality of shielding patterns, an outline of the shielding patterns corresponds to the strip exposed patterns, each of the shielding patterns respectively has a strip opening, and an extension direction of the strip openings is substantially parallel to an extension direction of the shielding patterns; performing a development process on the photoresist layer, so as to form a patterned photoresist layer on the layer; and patterning the layer by using the patterned photoresist layer as a mask.