MEMORY DEVICES AND METHODS OF OPERATING THE MEMORY DEVICE

摘要

To effectively generate a high inhibit voltage which is higher than an external power voltage applied to a memory device, the present disclosure relates to a method of operating the memory device including a plurality of memory cells which are arranged respectively in regions where first signal lines intersect with second signal lines. The method includes a step of applying an initial voltage to the first signal lines, a step of floating the first signal lines to which the initial voltage is applied, a step of applying a second inhibit voltage to the second signal lines, and a step of raising the voltage level of the first signal lines to a first inhibit voltage level, through capacitive coupling between the floated first signal lines and the second signal lines to which the second inhibit voltage is applied.