Damascene metal-insulator-metal (MIM) device with improved scaleability

摘要

A present method of fabricating a memory device includes the steps of providing a dielectric layer, providing an opening in the dielectric layer, providing a first conductive body in the opening, providing a switching body in the opening, the first conductive body and switching body filling the opening, and providing a second conductive body over the switching body. In an alternate embodiment, a second dielectric layer is provided over the first-mentioned dielectric layer, and the switching body is provided in an opening in the second dielectric layer.

主权项

1. A method of fabricating a memory device, the method comprising:
forming a first dielectric layer; forming an opening in the first dielectric layer; forming a first conductive body of a uniform material in the opening in the first dielectric layer to fill the opening in the first dielectric layer; forming a second dielectric layer over the first dielectric layer and the first conductive body; forming an opening in the second dielectric layer,
wherein the opening in the second dielectric layer extends completely through the second dielectric layer and overlaps with the first conductive body; forming a switching body in the opening in the second dielectric layer to fill the opening in the second dielectric layer,
wherein the switching body directly contacts the first conductive body and has sides that are coextensive with the sides the first conductive body; forming a third dielectric layer over the second dielectric layer and over the switching body; forming an opening in the third dielectric layer,
wherein the opening in the third dielectric layer extends completely through the third dielectric layer and overlaps with the first conductive body; and forming a second conductive body in the opening in the third dielectric layer,
wherein the second conductive body directly contacts the switching body layer and has sides that are coextensive with the sides the switching body, wherein the second conductive body directly contacts the switching body.