Resist underlayer film-forming composition which contains alicyclic skeleton-containing carbazole resin

摘要

There is provided a resist underlayer film used in lithography process that has a high n value and a low k value, and can effectively reduce reflection of light having a wavelength of 193 nm from the substrate in a three-layer process in which the resist underlayer film is used in combination with a silicon-containing intermediate layer. A resist underlayer film-forming composition used in lithography process including: a polymer containing a unit structure including a product obtained by reaction of a condensed heterocyclic compound and a bicyclo ring compound. The condensed heterocyclic compound is a carbazole compound or a substituted carbazole compound. The bicyclo ring compound is dicyclopentadiene, substituted dicyclopentadiene, tetracyclo[4.4.0.12,5.17,10]dodeca-3,8-diene, or substituted tetracyclo[4.4.0.12,5.17,10]dodeca-3,8-diene.

主权项

1. A resist underlayer film-forming composition comprising:
a polymer containing a unit structure including a product obtained by reaction of a condensed heterocyclic compound and a bicyclo ring compound; wherein
the polymer is a polymer containing a unit structure of Formula (1), a unit structure of Formula (2), a unit structure of Formula (3), or a combination of the unit structures of Formulae (1), (2), and (3): where
R1 to R14 are each a substituent of a hydrogen atom and are each independently a halogen group, a nitro group, an amino group, a hydroxy group, or a C1-10 alkyl group for which the groups are optionally substituted or a C6-40 aryl group for which the groups are optionally substituted;each of n1, n2, n5, n6, n9, n10, n13, n14, and n15 is an integer of 0 to 3;each of n3, n4, n7, n8, n11, and n12 is an integer of 0 to 4; andin Formula (3) Ar is a phenyl group or a naphthyl group.