Process kit shield for plasma enhanced processing chamber

摘要

Apparatus for processing substrates is disclosed herein. In some embodiments, an apparatus includes a first shield having a first end, a second end, and one or more first sidewalls disposed between the first and second ends, wherein the first end is configured to interface with a first support member of a process chamber to support the first shield in a position such that the one or more first sidewalls surround a first volume of the process chamber; and a second shield having a first end, a second end, and one or more second sidewalls disposed between the first and second ends of the second shield and about the first shield, wherein the first end of the second shield is configured to interface with a second support member of the process chamber to support the second shield such that the second shield contacts the first shield to form a seal therebetween.

主权项

1. A substrate processing system, comprising:
a process chamber having a chamber wall; a substrate support disposed within the process chamber and having a substrate support surface; a chamber lid moveable from a closed position disposed atop an upper end of the chamber wall to an open position; a first shield having a first end coupled to and movable with the chamber lid, a second end, and one or more first sidewalls disposed between the first and second ends, wherein the one or more first sidewalls surround an upper portion of the substrate support when the chamber lid is in the closed position; and a first volume defined by the chamber lid, the one or more first sidewalls and the substrate support surface when the chamber lid is in the closed position; a second shield having a first end coupled to an inner surface of the chamber wall, a second end, and one or more second sidewalls disposed between the first and second ends of the second shield and about the first shield, wherein the second end of the second shield is configured to support a first ring disposed about the substrate support surface of the substrate support, and wherein the first end of the second shield is supported in a position such that the second shield contacts a compressible element between the second end of the first shield and the second shield to form a seal therebetween when the chamber lid is in the closed position, wherein the first end of the second shield further comprises a lip extending radially outward from the one or more second sidewalls, wherein the lip is coupled to a first ledge disposed on the inner surface of the chamber wall; a second ring of the first shield is disposed above the lip of the second shield and about the first shield, wherein the second ring is disposed on a second ledge of the inner surface of the chamber wall; and a plurality of conductive elements contacting a lip facing side of the second ring, wherein the plurality of conductive elements are configured to contact a second ring facing side of the lip to provide a robust grounding surface between the lip and the second ring.