Magnetic memory

摘要

A magnetic memory according to an embodiment includes: a first MTJ element including a first storage layer including a first magnetic film having a changeable magnetization direction, a first reference layer including a second magnetic film having a fixed magnetization direction, and a first tunnel barrier layer provided therebetween; and a second MTJ element including a second storage layer including a third magnetic film having a changeable magnetization direction and magnetically connected to the first storage layer, a second reference layer including a fourth magnetic film having a fixed magnetization direction parallel to the magnetization direction of the first reference layer, and a second tunnel barrier layer provided therebetween, the second MTJ element being arranged in parallel with the first MTJ element in a direction perpendicular to a stacking direction of the first MTJ element.

主权项

1. A magnetic memory comprising a memory cell, the memory cell comprising:
a first magnetic tunnel junction (MTJ) element including a first storage layer including a first magnetic film having a changeable magnetization direction, a first reference layer including a second magnetic film having a fixed magnetization direction, and a first tunnel barrier layer provided between the first storage layer and the first reference layer, the first storage layer being above the first reference layer; a second MTJ element including a second storage layer including a third magnetic film having a changeable magnetization direction antiparallel to the magnetization direction of the first storage layer, a second reference layer including a fourth magnetic film having a fixed magnetization direction parallel to the magnetization direction of the first reference layer, and a second tunnel barrier layer provided between the second storage layer and the second reference layer, the second storage layer being above the second reference layer, the first MTJ element and the second MTJ element being arranged in a direction crossing a stacking direction of the first MTJ element; and a write circuit and a read circuit, the write circuit being configured to perform a writing in which a direction of a first write current flowing between the first storage layer and the first reference layer of the first MTJ element via the first tunnel barrier layer is opposite to a direction of a second write current flowing between the second storage layer and the second reference layer of the second MTJ element via the second tunnel barrier layer, and the read circuit being configured to perform a reading in which a direction of a first read current flowing between the first storage layer and the first reference layer of the first MTJ element via the first tunnel barrier layer is the same as a direction of a second read current flowing between the second storage layer and the second reference layer of the second MTJ element via the second tunnel barrier layer.