Imaging device

摘要

An imaging device which is highly stable to irradiation with radiations such as X-rays and can inhibit a decrease in electrical characteristics is provided. The imaging device obtains an image using radiations such as X-rays and includes pixel circuits which are arranged in a matrix and which a scintillator overlaps. Each of the pixel circuits includes a switching transistor whose off-state current is extremely low and a light-receiving element. A shielding layer formed using a metal material and the like overlaps the transistor and the light-receiving element. With the structure, an imaging device which is highly stable to irradiation with radiations such as X-rays and can inhibit a decrease in electrical characteristics can be provided.

主权项

1. An imaging device comprising:
a pixel circuit including a light-receiving element and a circuit portion; an insulating film over the pixel circuit; a shielding layer over the insulating film; and a scintillator over the shielding layer, configured to emit light in response to radiation from a radiation source, wherein the circuit portion includes a first transistor electrically connected to the light-receiving element, wherein the first transistor comprises a channel formation region which comprises an oxide semiconductor, wherein the shielding layer and the pixel circuit overlap each other to prevent the pixel circuit from being exposed to the radiation, wherein the shielding layer includes an opening, wherein the opening and the circuit portion do not overlap each other, wherein the light-receiving element senses light emitted from the scintillator passing through the opening and the insulating film, and wherein the light-receiving element is included in the circuit portion.