发明名称 |
Etchstop layers and capacitors |
摘要 |
Capacitor structures for integrated circuit devices are provided. Capacitors include proximate dense or highly dense etchstop layers. The dense or highly dense etchstop layer is, for example, a high-k material. Capacitors are, for example, metal-insulator-metal (MIM) capacitors and are useful in DRAM (dynamic random access memory) and eDRAM (embedded dynamic random access memory) structures. |
申请公布号 |
US9343524(B2) |
申请公布日期 |
2016.05.17 |
申请号 |
US201514732593 |
申请日期 |
2015.06.05 |
申请人 |
Intel Corporation |
发明人 |
Brain Ruth A. |
分类号 |
H05K1/00;H01L49/02;H01L21/311;H01L23/522;G06F1/18;H01L21/768;H01L21/02;H01L23/532;H01L27/108 |
主分类号 |
H05K1/00 |
代理机构 |
Blakely, Sokoloff, Taylor & Zafman LLP |
代理人 |
Blakely, Sokoloff, Taylor & Zafman LLP |
主权项 |
1. A semiconductor device comprising,
a substrate having at least one dielectric layer disposed on the substrate surface; a first dielectric etchstop layer and a second dielectric etchstop layer disposed on the dielectric layer, wherein the second dielectric etchstop layer is disposed directly on the first dielectric etchstop layer; and a well formed through the first and second dielectric etchstop layers and in the at least one dielectric layer, wherein the well comprises inwardly tapered sidewalls and a bottom, and a first layer of conducting material is disposed on the inwardly tapered sidewalls and bottom of the well, an insulating layer disposed on the first layer of conducting material, and a second layer of conducting material disposed on the insulating layer. |
地址 |
Santa Clara CA US |