Semiconductor device

摘要

A semiconductor device includes a first semiconductor substrate and a second semiconductor substrate laminated with an insulating layer, a first transmission line formed on the first semiconductor substrate, the first transmission line including a signal line and a ground, a second transmission line formed on the second semiconductor substrate, the second transmission line including a signal line and a ground, a first via layer for the signal lines, the first via layer for the signal lines being formed of a conductor layer formed within a via hole, a first via layer for the grounds, the first via layer for the grounds being formed of a conductor layer formed within a via hole, and a second via layer for the grounds, the second via layer for the grounds being formed of a conductor layer formed within a via hole.

主权项

1. A semiconductor device comprising:
a first semiconductor substrate and a second semiconductor substrate laminated with an insulating layer interposed between the first semiconductor substrate and the second semiconductor substrate; a first transmission line formed on said first semiconductor substrate, the first transmission line including a signal line and a ground; a second transmission line formed on said second semiconductor substrate, the second transmission line including a signal line and a ground; a first via layer for the signal lines, the first via layer for the signal lines being formed of a conductor layer formed within a via hole, and connected to the signal line of said first transmission line and the signal line of said second transmission line; a first via layer for the grounds, the first via layer for the grounds being formed of a conductor layer formed within a via hole, and connected to the ground of said first transmission line and the ground of said second transmission line; a second via layer for the grounds, the second via layer for the grounds being formed of a conductor layer formed within a via hole, connected to the ground of said first transmission line and/or the ground of said second transmission line, and including a via layer in a shape of a band, the via layer in the shape of the band being formed so as to be opposed to said first via layer for the signal lines; and a third via layer for the grounds on an opposite side of said second via layer for the grounds from said first via layer, the third via layer for the grounds being formed of a conductor layer formed within a via hole, and connected to the ground of said second transmission line.