Semiconductor devices having staggered air gaps

摘要

A semiconductor device includes a substrate, a plurality of first conductive patterns disposed on the substrate and a plurality of second conductive patterns disposed on the first conductive patterns. Respective air gaps are disposed between adjacent ones of the first conductive patterns overlying a first region of the substrate, while adjacent ones of the first conductive patterns overlying a second region of the substrate do not have air gaps disposed therebetween. The air gaps may include first air gaps, and the device may further include second air gaps disposed between adjacent ones of the second conductive patterns in the second region. Adjacent ones of the second conductive patterns overlying a second region of the substrate may not have air gaps disposed therebetween.

主权项

1. A semiconductor device, comprising:
a substrate; a plurality of first conductive patterns disposed on the substrate; a plurality of second conductive patterns disposed on the first conductive patterns; and a plurality of first air gaps, respective ones of which are disposed between adjacent ones of the first conductive patterns overlying a first region of the substrate; a plurality of second air gaps disposed between adjacent ones of the second conductive patterns overlying a second region of the substrate, wherein adjacent ones of the first conductive patterns overlying the second region of the substrate do not have air gaps disposed therebetween.