发明名称 Method for reducing particle generation at bevel portion of substrate
摘要 A method for transporting a substrate using an end effector which mechanically clamps a periphery of the substrate includes: before transporting the substrate, depositing a compressive film only on, at, or in a bevel portion of the substrate; and transporting the substrate whose bevel portion is covered by the compressive film as the outermost film, using an end effector while mechanically clamping the periphery of the substrate.
申请公布号 US9343343(B2) 申请公布日期 2016.05.17
申请号 US201414281477 申请日期 2014.05.19
申请人 ASM IP Holding B.V. 发明人 Mori Yukihiro
分类号 H01L23/31;H01L21/677;H01L21/67;C23C16/50;H01J37/32;B25J11/00;C23C16/04;C23C16/458 主分类号 H01L23/31
代理机构 Snell & Wilmer LLP 代理人 Snell & Wilmer LLP
主权项 1. An apparatus for plasma-enhanced CVD, comprising: upper and lower conductive electrodes, between which a substrate is loaded, said upper and lower conductive electrodes being arranged so that a plasma is generated only over or at a bevel portion of the substrate, wherein the upper and lower conductive electrodes radially extend in parallel to the substrate beyond the entire periphery of the substrate, and a gas nozzle or nozzles are arranged at or near a center of the upper conductive electrode.
地址 Almere NL