发明名称 |
Method for reducing particle generation at bevel portion of substrate |
摘要 |
A method for transporting a substrate using an end effector which mechanically clamps a periphery of the substrate includes: before transporting the substrate, depositing a compressive film only on, at, or in a bevel portion of the substrate; and transporting the substrate whose bevel portion is covered by the compressive film as the outermost film, using an end effector while mechanically clamping the periphery of the substrate. |
申请公布号 |
US9343343(B2) |
申请公布日期 |
2016.05.17 |
申请号 |
US201414281477 |
申请日期 |
2014.05.19 |
申请人 |
ASM IP Holding B.V. |
发明人 |
Mori Yukihiro |
分类号 |
H01L23/31;H01L21/677;H01L21/67;C23C16/50;H01J37/32;B25J11/00;C23C16/04;C23C16/458 |
主分类号 |
H01L23/31 |
代理机构 |
Snell & Wilmer LLP |
代理人 |
Snell & Wilmer LLP |
主权项 |
1. An apparatus for plasma-enhanced CVD, comprising:
upper and lower conductive electrodes, between which a substrate is loaded, said upper and lower conductive electrodes being arranged so that a plasma is generated only over or at a bevel portion of the substrate, wherein the upper and lower conductive electrodes radially extend in parallel to the substrate beyond the entire periphery of the substrate, and a gas nozzle or nozzles are arranged at or near a center of the upper conductive electrode. |
地址 |
Almere NL |