| 发明名称 | Method of manufacturing semiconductor device | ||
| 摘要 | A method of manufacturing a semiconductor device provided with a stack of a first film substantially free of oxygen and a second film disposed above the first film and comprising a metal oxide containing an uneasily etched material is disclosed. The method includes etching the second film by a first process using a first etch gas containing a boron trichloride containing gas and by a second process following the first process using a second etch gas containing an inert gas. In the second process, the second etch gas is used while a bias power is controlled to be equal to or greater than an etching threshold energy of the second film. | ||
| 申请公布号 | US9343331(B2) | 申请公布日期 | 2016.05.17 |
| 申请号 | US201514644908 | 申请日期 | 2015.03.11 |
| 申请人 | KABUSHIKI KAISHA TOSHIBA | 发明人 | Matsuda Kazuhisa;Sasaki Toshiyuki;Omura Mitsuhiro |
| 分类号 | H01L21/3065;H01L21/311;H01L21/3213 | 主分类号 | H01L21/3065 |
| 代理机构 | Finnegan, Henderson, Farabow, Garrett & Dunner, LLP | 代理人 | Finnegan, Henderson, Farabow, Garrett & Dunner, LLP |
| 主权项 | 1. A method of manufacturing a semiconductor device provided with a stack of a first film substantially free of oxygen and a second film disposed above the first film and comprising a metal oxide containing an uneasily etched material, the method comprising: etching the second film by a first process using a first etch gas containing a boron trichloride containing gas and by a second process following the first process using a second etch gas containing an inert gas, the second etch gas being used in the second process while controlling a bias power to be equal to or greater than an etching threshold energy of the second film, wherein the uneasily etched material contains at least one material selected from the group consisting of lanthanum, yttrium, magnesium, iron, cobalt, nickel, and barium. | ||
| 地址 | Tokyo JP | ||