Photolithographic, thickness non-uniformity, compensation features for optical photolithographic semiconductor structure formation

摘要

A semiconductor structure having a substrate; an active device formed in an active semiconductor region of the substrate, the active device having a control electrode for controlling a flow of carriers through the active semiconductor region between a pair of electrical contacts; and a photolithographic, thickness non-uniformity, compensation feature, disposed on the surface substrate off of the active semiconductor region. In one embodiment the feature comprises pads on the surface of the substrate and off of the active semiconductor region.

主权项

1. A method for firming a semiconductor structure, such structure having: a substrate; an active device formed in an active semiconductor region of the substrate, the active device having a control electrode for controlling a flow of carriers through a channel region of the active semiconductor region between a pair of electrical contacts, the method comprising:
forming the pair of contacts in ohmic contact with the active semiconductor region; forming a dielectric layer over a surface of the structure, the dielectric layer being disposed over the active semiconductor region where the control electrode is to be formed, over the pair of contacts and also over a pair of photolithographic, thickness non uniformity, compensation features disposed laterally adjacent to, but off of, the active semiconductor region and on an inactive semiconductor region; forming a photoresist layer over the dielectric layer; forming a window through the photoresist layer using optical photolithographic-etching processing using a single mask, the window having two portions, one portion being a narrower opening portion with length L1 over the active semiconductor region where the channel region is to be formed and a second portion having a wider opening L2, where the length L2 is wider than the length L1, over the of active semiconductor region to expose underlying portions of the dielectric layer; etching away the exposed portions of the dielectric layer to expose an underlying portions of the substrate both over the active semiconductor region and the off active semiconductor region; and forming the control electrode in Schottky contact with the active semiconductor region on the exposed portions of the substrate.