Methods of forming silicon-containing dielectric materials and semiconductor device structures

摘要

A method of forming a silicon-containing dielectric material. The method includes forming a plasma comprising nitrogen radicals, absorbing the nitrogen radicals onto a substrate, and exposing the substrate to a silicon-containing precursor in a non-plasma environment to form monolayers of a silicon-containing dielectric material on the substrate. Additional methods are also described, as are semiconductor device structures including the silicon-containing dielectric material and methods of forming the semiconductor device structures.

主权项

1. A method of forming a silicon-containing dielectric material, comprising:
forming a plasma comprising nitrogen radicals; chemisorbing the nitrogen radicals onto a substrate; terminating the plasma; and after chemisorbing the nitrogen radicals onto the substrate, exposing the substrate comprising the chemisorbed nitrogen to a silicon-containing precursor in a non-plasma environment to form monolayers of silicon bonded to the chemisorbed nitrogen on the substrate.