High temperature intermittent ion implantation

摘要

A method includes providing a semiconductor substrate, and performing an ion implantation process to a surface of the substrate. The ion implantation process includes intermittently applying an ion beam to the surface, and while applying the ion beam, applying a heating process with a heating temperature above a threshold level.

主权项

1. A method comprising:
providing a semiconductor substrate; and performing an ion implantation process to a surface of the substrate, the ion implantation process comprising:
applying an ion beam to the surface during a first time range;not applying the ion beam to the surface during a second time range, the second time range following the first time range;applying the ion beam to the surface during a third time range, the third time range following the second time range;not applying the ion beam to the surface during a fourth time range, the fourth time range following the third time range; while performing the ion implantation process, continuously applying a heating process with a heating temperature above a threshold level; and after performing the ion implantation process, performing an annealing spike process to the substrate,
wherein the annealing spike process includes applying an annealing temperature that is higher than the heating temperature, andwherein a time duration of the annealing spike process is less than a time duration of the heating process.