| 发明名称 | GCIB-treated resistive device | ||
| 摘要 | The present disclosure includes GCIB-treated resistive devices, devices utilizing GCIB-treated resistive devices (e.g., as switches, memory cells), and methods for forming the GCIB-treated resistive devices. One method of forming a GCIB-treated resistive device includes forming a lower electrode, and forming an oxide material on the lower electrode. The oxide material is exposed to a gas cluster ion beam (GCIB) until a change in resistance of a first portion of the oxide material relative to the resistance of a second portion of the oxide material. An upper electrode is formed on the first portion. | ||
| 申请公布号 | US9343677(B2) | 申请公布日期 | 2016.05.17 |
| 申请号 | US201514596666 | 申请日期 | 2015.01.14 |
| 申请人 | Micron Technology, Inc. | 发明人 | Smythe, III John A.;Sandhu Gurtej S. |
| 分类号 | G11C11/34;H01L45/00;G11C13/00;H01L27/24 | 主分类号 | G11C11/34 |
| 代理机构 | Brooks, Cameron & Huebsch, PLLC | 代理人 | Brooks, Cameron & Huebsch, PLLC |
| 主权项 | 1. A device, comprising: a first electrode; an oxide material over the first electrode, the oxide material having been exposed to a gas cluster ion beam (GCIB) causing a resistance of a first portion of the oxide material to differ from a resistance of a second portion of the oxide material; and a second electrode over the first portion. | ||
| 地址 | Boise ID US | ||