发明名称 Semiconductor laser diode with integrated heating region
摘要 A semiconductor laser diode with integrated heating generally includes a lasing region and a heating region integrated into the same semiconductor structure or chip. The lasing region and the heating region include first and second portions, respectively, of the semiconductor layers forming the semiconductor structure and include first and second portions, respectively, of the active regions formed by the semiconductor layers. Separate laser and heater electrodes are electrically connected to the respective lasing and heating regions for driving the respective lasing and heating regions with drive currents. The heating region may thus be driven independently from the lasing region, and heat may be conducted through the semiconductor layers from the heating region to the lasing region allowing the temperature to be controlled more efficiently.
申请公布号 US9343870(B2) 申请公布日期 2016.05.17
申请号 US201414501751 申请日期 2014.09.30
申请人 Applied Optoelectronics, Inc. 发明人 Zheng Jun;Anselm Klaus Alexander;Zhang Huanlin;Chang Hung-Lun
分类号 H01S5/00;H01S5/024;H01S5/026;H01S5/042;H01S5/20;H01S5/10;H01S5/12;H01S5/40;G02B6/12;H04B10/50 主分类号 H01S5/00
代理机构 Grossman Tucker Perreault & Pfleger, PLLC 代理人 Grossman Tucker Perreault & Pfleger, PLLC ;Kinsella Norman S.
主权项 1. A semiconductor laser diode with integrated heating, the semiconductor laser diode comprising: a plurality of semiconductor layers forming at least one active region; a lasing region including a first portion of the semiconductor layers and the active region, wherein the lasing region is configured to emit laser light; a laser electrode located on an outer surface of the first portion of the semiconductor layers and electrically coupled to the lasing region in the first portion of the semiconductor layers; a heating region including a second portion of the semiconductor layers and the active region, wherein the heating region is configured to generate heat, and wherein the heating region is thermally coupled to the lasing region such that heat generated by the heating region is conducted to the lasing region; a heater electrode located on an outer surface of the second portion of the semiconductor layers and electrically coupled to the heating region in the second portion of the semiconductor layers, wherein the heater electrode is separated from the laser electrode; and wherein the first portion of the active region in the lasting region is isolated from the second portion of the active region in the heating region.
地址 Sugar Land TX US