METHOD OF FORMING A SEMICONDUCTOR DEVICE HAVING GATE ELECTRODE

摘要

The present invention relates to a method for forming a semiconductor device having a gate electrode. An active area is formed on a substrate. A temporary gate crossing the active area and a capping pattern covering the temporary gate are formed. A spacer is formed on a side surface of the temporary gate. A growth prevention layer limited to the inside of an upper corner of the temporary gate is formed. A source and a drain are formed on the active area adjacent to the temporary gate. The active area is exposed by removing the capping pattern, the growth prevention layer, and the temporary gate. A gate electrode is formed on the exposed active area. Therefore, the quality and yield of the semiconductor device can be signifcantly improved.