METHOD FOR FORMING TUNGSTEN CONTAINING THIN FILM

摘要

According to an embodiment of the present invention, a method to form a thin film containing tungsten comprises: a step of supplying a precursor, containing tungsten, to a substrate in a chamber; a step of purging the precursor from the chamber; a step of supplying a reaction gas, including nitrogen gas (N_2) and hydrogen gas (H_2), to the substrate; and a step of purging the reaction gas from the chamber. As such, the present invention is capable of having low specific resistivity and improved applicability.