发明名称 Device comprising a fluid channel fitted with at least one microelectronic or nanoelectronic system, and method for manufacturing such a device
摘要 A device comprising a substrate comprising at least one microelectronic and/or nanoelectronic structure comprising at least one sensitive portion and one fluid channel (2) defined between said substrate and a cap (6), where said fluid channel (2) comprises at least two apertures to provide a flow in said channel, where said microelectronic and/or nanoelectronic structure is located within the fluid channel, where said cap is assembled with the substrate at an assembly interface, where said device comprises electrical connections between said microelectronic and/or nanoelectronic structure and the exterior of the fluid channel (2), where said electrical connections (8) are formed by vias made through the substrate (4) directly below the microelectronic and/or nanoelectronic structure, and in electrical contact with said microelectronic and/or nanoelectronic structure.
申请公布号 US9340410(B2) 申请公布日期 2016.05.17
申请号 US201414336351 申请日期 2014.07.21
申请人 Commissariat a l'energie atomique et aux energies alternatives 发明人 Ollier Eric;Marcoux Carine
分类号 B81B7/00;B81C1/00;G01N30/60 主分类号 B81B7/00
代理机构 Oblon, McClelland, Maier & Neustadt, L.L.P. 代理人 Oblon, McClelland, Maier & Neustadt, L.L.P.
主权项 1. A device comprising: a substrate comprising at least one electronic structure including at least one of a microelectronic structure and a nanoelectronic structure comprising at least one sensitive portion, a cap, said cap being assembled with the substrate at an assembly interface, one fluid channel defined between said substrate and said cap, said fluid channel comprising at least two apertures to provide a flow in said channel, said electronic structure being located within the fluid channel, at least one electrical connection between said electronic structure and the exterior of the fluid channel, the at least one electrical connection being formed by a via made at least partly through the substrate directly below the electronic structure, and in electrical contact with the electronic structure, and an intermediate layer located only at the assembly interface located between the cap and the substrate.
地址 Paris FR