Resistive random access memory and method of resetting a resistive random access memory

摘要

According to another embodiment, a method of a reset operation for a RRAM is provided. The method includes the following operations: providing a first voltage to the dielectric side electrode of the resistor; and providing a second voltage to a gate of the transistor, wherein the first voltage in a second loop is lower than that in a first loop, and the second voltage in the second loop is higher than that in the first loop.

主权项

1. A resistive random access memory (RRAM), comprising:
a resistor comprising a cap side electrode and a dielectric side electrode; a transistor, a drain of the transistor electrically connected to the dielectric side electrode; a first voltage source electrically connected to a source of the transistor; and a second voltage source electrically connected to a gate of the transistor, wherein for a reset operation comprising at least two loops, the first voltage source provides a lower voltage in a second loop than the first voltage source does in a first loop, and the second voltage source provides a higher voltage in the second loop than the second voltage source does in the first loop.