Method for manufacturing a transistor in which the strain applied to the channel is increased,申请号US201514802283-传众专利搜索

发明名称	Method for manufacturing a transistor in which the strain applied to the channel is increased
摘要	Method of manufacturing a transistor on a layer made of a first crystalline semiconducting material to make a channel, deposited on a dielectric layer, the method including the following steps: epitaxial growth of zones made of a second semiconducting material on the layer made of a first crystalline semiconducting material, so as to form source and drain blocks with the layer made of a first crystalline semiconducting material on each side of the channel, the second semiconducting material having a lattice parameter different from that of the first semiconducting material,in-depth amorphization of part of zones made of a second semiconducting material so as to keep only one layer of second crystalline semiconducting material on the surface of the source and drain blocks, and amorphization of zones of the layer made of a first semiconducting material located under zones made of a second semiconducting material,recrystallization of the source and drain blocks such that the second semiconducting material imposes its lattice parameter on the source and drain zones.
申请公布号	US9343375(B2)	申请公布日期	2016.05.17
申请号	US201514802283	申请日期	2015.07.17
申请人	Commissariat à l'énergie atomique et aux énergies alternatives	发明人	Batude Perrine;Mazen Frederic;Reboh Shay;Sklenard Benoit
分类号	H01L21/8238;H01L21/84;H01L29/66	主分类号	H01L21/8238
代理机构	Oblon, McClelland, Maier & Neustadt, L.L.P.	代理人	Oblon, McClelland, Maier & Neustadt, L.L.P.
主权项	1. Method of manufacturing a transistor on a layer made of a first crystalline semiconducting material to make a channel, deposited on a dielectric layer, the method including the following steps: a) growing zones made of a second semiconducting material on the layer made of a first crystalline semiconducting material by at least one epitaxy, so as to form source and drain blocks with the layer made of a first crystalline semiconducting material on each side of the channel, the second semiconducting material having a lattice parameter different from that of the first semiconducting material, b) in-depth amorphisation of part of zones made of a second semiconducting material so as to keep only one layer of the second crystalline semiconducting material on the surface of the source and drain blocks, and amorphisation of at least the zones of the layer made of a first semiconducting material located under zones made of a second semiconducting material, c) recrystallisation of the source and drain blocks such that the second semiconducting material imposes its lattice parameter on the source and drain zones.
地址	Paris FR