Middle of line structures and methods for fabrication

摘要

A contact structure includes a permanent antireflection coating formed on a substrate having contact pads. A patterned dielectric layer is formed on the antireflective coating. The patterned dielectric layer and the permanent antireflective coating form openings. The openings correspond with locations of the contact pads. Contact structures are formed in the openings to make electrical contact with the contacts pads such that the patterned dielectric layer and the permanent antireflective coating each have a conductively filled region forming the contact structures.

主权项

1. A method for fabricating an electrically conductive contact, comprising:
forming a permanent antireflective coating on a substrate and over semiconductor devices that are formed on the substrate; forming an interlevel dielectric composition on the permanent antireflective coating wherein the interlevel dielectric composition includes a material patternable with irradiation and curable to become a permanent interlevel dielectric layer; patterning the interlevel dielectric composition to form contact holes by exposing the interlevel dielectric composition to radiation and developing the interlevel dielectric composition with a chemical solution; opening up the permanent antireflective coating to expose contact pads on the substrate; curing the interlevel dielectric composition thereby converting the interlevel dielectric composition into a patterned permanent interlevel dielectric layer after said opening up the permanent antireflective coating; and filling the contacts holes with an electrically conductive fill material to form electrically conductive contacts to silicided regions of the semiconductor devices that are formed on the substrate, wherein the permanent antireflective coating is formed over a gate structure and channel region of at least one of the semiconductor device, and the silicided regions comprise source and drain regions of said at least one of the semiconductor devices.