Method for trimming carbon-containing film at reduced trimming rate

摘要

A method for trimming a carbon-containing film includes: (i) providing a substrate having a carbon-containing film formed thereon; (ii) supplying a trimming gas and a rare gas to the reaction space, which trimming gas includes an oxygen-containing gas; and (iii) applying RF power between the electrodes to generate a plasma using the trimming gas and the rare gas and to thereby trim the carbon-containing film while controlling a trimming rate at 55 nm/min or less as a function of at least one parameter selected from the group consisting of a flow rate of an oxygen-containing gas, a flow rate of nitrogen-containing gas to be added to the oxygen-containing gas, pressure in the reaction space, RF power, a duty cycle of RF power, a distance between the electrodes, and a temperature of a susceptor on which the substrate is placed.

主权项

1. A method for trimming a carbon-containing film, comprising:
(i) providing a substrate having a carbon-containing film formed thereon in a reaction space wherein the substrate is placed between electrodes; (ii) supplying a trimming gas and a rare gas to the reaction space, said trimming gas comprising an oxygen-containing gas; and (iii) applying RF power between the electrodes to generate a plasma using the trimming gas and the rare gas in the reaction space, to thereby trim the carbon-containing film while controlling a trimming rate at 55 nm/min or less as a function of at least one parameter selected from the group consisting of a flow rate of the oxygen-containing gas, a flow rate of nitrogen-containing gas to be added to the oxygen-containing gas, pressure in the reaction space, RF power, a duty cycle of RF power, a distance between the electrodes, and a temperature of a susceptor on which the substrate is placed, said method further comprising, prior to step (ii): (a) supplying a rare gas to the reaction space; and (b) applying RF power between the electrodes to generate a plasma using the rare gas, said RF power being higher than the RF power applied in step (iii), followed by step (ii) without stopping application of RF power.