| 发明名称 | Multiple step programming in a memory device | ||
| 摘要 | Method of operating a memory include programming a memory cell and reading the memory cell to determine a programmed threshold voltage of the memory cell. If the programmed threshold voltage is within a threshold voltage distribution of a plurality of threshold voltage distributions, the memory cell is reprogrammed, and if the programmed threshold voltage is not within a threshold voltage distribution of the plurality of threshold voltage distributions, the memory cell is allowed to remain at the programmed threshold voltage. | ||
| 申请公布号 | US9343168(B2) | 申请公布日期 | 2016.05.17 |
| 申请号 | US201414471550 | 申请日期 | 2014.08.28 |
| 申请人 | Micron Technology, Inc. | 发明人 | Moschiano Violante;Jones Mason |
| 分类号 | G11C11/34;G11C16/34;G11C16/10;G11C11/56;G11C16/26;G11C16/04 | 主分类号 | G11C11/34 |
| 代理机构 | Dicke, Billig & Czaja, PLLC | 代理人 | Dicke, Billig & Czaja, PLLC |
| 主权项 | 1. A method of operating a memory, comprising: programming a memory cell; reading the memory cell to determine a programmed threshold voltage of the memory cell; if the programmed threshold voltage is within a threshold voltage distribution of a plurality of threshold voltage distributions, reprogramming the memory cell; and if the programmed threshold voltage is not within a threshold voltage distribution of the plurality of threshold voltage distributions, leaving the memory cell at the programmed threshold voltage. | ||
| 地址 | Boise ID US | ||