发明名称 Cross technology reticle (CTR) or multi-layer reticle (MLR) CDU, registration, and overlay techniques
摘要 Methods for reducing reticle transmission differences and for optimizing layer placement for overlay in MTRs and CTRs are disclosed. Embodiments include providing a reticle having a prime area and a frame area surrounding the prime area; determining RT differences across the prime area; and providing RT adjustment structures on the reticle to decrease the RT differences. Other embodiments include grouping multiple layers of a semiconductor production flow, the layers for each group having an RT difference less than a predetermined value; and placing the layers on plural ordered reticles of a reticle set, each reticle having multiple image fields, by selecting, for each reticle, layers from a single group and optimizing placement of the layers for overlay. Other embodiments include selectively rotating image fields on a reticle having multiple image fields to improve overlay, or optimizing placement of DDLs on CTRs by placing each design orientation on a different reticle.
申请公布号 US9341961(B2) 申请公布日期 2016.05.17
申请号 US201313839894 申请日期 2013.03.15
申请人 GLOBALFOUNDRIES SINGAPORE PTE. LTD. 发明人 Ning Guo Xiang;Hotzel Arthur;Ackmann Paul;Tan Soon Yoeng
分类号 G03B27/32;G03B27/54;G03F1/00;G06F17/50;G03F7/20;G03F1/70;G03F1/38;G03F1/50 主分类号 G03B27/32
代理机构 Ditthavong & Steiner, P.C. 代理人 Ditthavong & Steiner, P.C.
主权项 1. A method comprising: providing a transmissive or reflective reticle having a frame area and a prime area, the frame area surrounding the prime area; determining differences in RT (reticle transmission or reflection for a transmissive or reflective reticle, respectively) across the prime area; and providing disposable RT adjustment structures in the prime area in dummy filled regions on the reticle to decrease or increase the RT differences, wherein the reticle comprises a multilayer reticle (MLR), wherein determining RT differences comprises determining RT differences between different layers of the MLR, and wherein the RT is adjusted subsequent to a determination of an average RT tuning of respective layers of the MLR.
地址 Singapore SG