发明名称 |
Sense amplifier, semiconductor memory device using thereof and read method thereof |
摘要 |
A sense amplifier is provided which includes a first load supplied with a selection cell current from a read bit line connected to a selected memory cell; a second load supplied with a reference current from a reference read bit line connected to a reference cell, a resistance value of the second load being different from a resistance value of the first load; and a sensing unit configured to correct a level of the reference current based on a resistance ratio of the first and second loads and to compare the selection cell current and the corrected reference current. |
申请公布号 |
US9343138(B2) |
申请公布日期 |
2016.05.17 |
申请号 |
US201414518485 |
申请日期 |
2014.10.20 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
Antonyan Artur |
分类号 |
G11C7/06;G11C11/4091;G11C11/4099 |
主分类号 |
G11C7/06 |
代理机构 |
Sughrue Mion, PLLC |
代理人 |
Sughrue Mion, PLLC |
主权项 |
1. A sense amplifier comprising:
a first load supplied with a selection cell current from a read bit line connected to a selected memory cell; a second load supplied with a reference current from a reference read bit line connected to a reference cell, a resistance value of the second load being different from a resistance value of the first load; and a sensing unit configured to correct a level of the reference current based on a resistance ratio of the first and second loads and to compare the selection cell current and the corrected reference current, wherein the second load comprises a plurality of transistors, channels of the plurality of transistors being connected between an operation voltage source and the reference read bit line. |
地址 |
Suwon-si KR |