Memory arrays and methods of forming electrical contacts

摘要

Some embodiments include methods of forming electrical contacts. A row of semiconductor material projections may be formed, with the semiconductor material projections containing repeating components of an array, and with a terminal semiconductor projection of the row comprising a contact location. An electrically conductive line may be along said row, with the line wrapping around an end of said terminal semiconductor projection and bifurcating into two branches that are along opposing sides of the semiconductor material projections. Some of the semiconductor material of the terminal semiconductor projection may be replaced with dielectric material, and then an opening may be extended into the dielectric material. An electrical contact may be formed within the opening and directly against at least one of the branches. Some embodiments include memory arrays.

主权项

1. A memory array, comprising:
projections supported by a substrate; the projections being arranged in rows, with terminal projections of each row being elongated projections; conductive lines along the rows of projections, each of the electrically conductive lines wrapping around ends of the elongated projections and bifurcating into two branches that are along opposing sides of the elongated projections; each of the elongated projections comprising a dielectric region laterally between a pair of semiconductor material regions; the two branches along the opposing sides of each elongated projection having first sections along the semiconductor material regions, and having second sections along the dielectric region; and conductive material extending into the dielectric regions of the elongated projections; the conductive material within each elongated projection being directly against the two branches along the opposing sides of the elongated projection.