发明名称 |
Substrate processing method and substrate processing apparatus |
摘要 |
A substrate processing method includes an SPM supplying step of supplying SPM having high temperature to an upper surface of a substrate, a DIW supplying step of supplying, after the SPM supplying step, DIW having room temperature to the upper surface of the substrate to rinse off a liquid remaining on the substrate, and a hydrogen peroxide water supplying step of supplying, after the SPM supplying step and before the DIW supplying step, hydrogen peroxide water of a liquid temperature lower than the temperature of the SPM and not less than room temperature, to the upper surface of the substrate in a state where the SPM remains on the substrate. |
申请公布号 |
US9340761(B2) |
申请公布日期 |
2016.05.17 |
申请号 |
US201414475069 |
申请日期 |
2014.09.02 |
申请人 |
SCREEN Holdings Co., Ltd. |
发明人 |
Negoro Sei;Muramoto Ryo;Nagai Yasuhiko;Osuka Tsutomu;Iwata Keiji |
分类号 |
B44C1/22;C23F1/00;C03C15/00;C03C25/68;H01L21/302;H01L21/461;C11D11/00;H01L21/67;C11D3/00 |
主分类号 |
B44C1/22 |
代理机构 |
Ostrolenk Faber LLP |
代理人 |
Ostrolenk Faber LLP |
主权项 |
1. A substrate processing method comprising:
a chemical liquid supplying step of supplying a chemical liquid having a first temperature to a major surface of a substrate; a rinse liquid supplying step of supplying, after the chemical liquid supplying step, a rinse liquid having a second temperature lower than the first temperature to the major surface of the substrate to rinse off the liquid remaining on the substrate; a reaction liquid supplying step of discharging, after the chemical liquid supplying step and before the rinse liquid supplying step, a reaction-liquid-containing liquid, which contains, at least at a start of discharge of itself, a reaction liquid, causing an exothermic reaction upon mixing with the chemical liquid supplied to the substrate in the chemical liquid supplying step, and a heat generating liquid, generating heat upon mixing with the reaction liquid, and has a liquid temperature not more than the first temperature and not less than the second temperature, toward the major surface of the substrate in a state where the chemical liquid supplied to the substrate in the chemical liquid supplying step remains on the substrate; and a reaction liquid concentration changing step of reducing, in parallel to the reaction liquid supplying step, a proportion of the heat generating liquid contained in the reaction-liquid-containing liquid discharged toward the substrate such that a liquid temperature of the reaction-liquid-containing liquid discharged toward the substrate decreases to a temperature lower than a liquid temperature of the reaction-liquid-containing liquid at the start of discharge of the reaction-liquid-containing liquid. |
地址 |
JP |