发明名称 |
MANUFACTURING METHOD OF THIN FILM METAL RESISTANCE |
摘要 |
PROBLEM TO BE SOLVED: To provide a method capable of manufacturing a plurality of thin film metal resistances having values of resistance per unit length different from each other while suppressing an increase in the number of manufacturing processes.SOLUTION: A method includes the steps of: forming a resist pattern 41 having a first opening 42 for forming a first thin film metal resistor and a second opening 43 for forming a second thin film metal resistor on an insulation film 51; depositing a metal material for a thin film metal resistance within the first opening 42 and the second opening 43 on the resist pattern 41; and removing the metal material on the resist pattern 41 by removing the resist pattern 41. The width W5 of a first part 42a of the first opening 42 for forming a first resistance part of the first thin film metal resistor is made narrower than the width W6 of a first part 43a of the second opening 43 for forming a second resistance part of the second thin film metal resistor.SELECTED DRAWING: Figure 5 |
申请公布号 |
JP2016081958(A) |
申请公布日期 |
2016.05.16 |
申请号 |
JP20140209003 |
申请日期 |
2014.10.10 |
申请人 |
SUMITOMO ELECTRIC IND LTD |
发明人 |
WATANABE SHIYOUSUU |
分类号 |
H01L21/822;H01C7/00;H01C17/06;H01L27/04 |
主分类号 |
H01L21/822 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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