| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a wave absorber which allows for adjustment of the characteristics when building an anechoic chamber anew, or at the time of additional adjustment of anechoic chamber, and to provide the wave absorber.SOLUTION: To satisfy the NSA characteristics (30M-1GHz) and the SVSWR characteristics (1-18GHz) by inserting a wave absorber (second wave absorber), consisting of a matching shape and a disposition shape, or their combination shape, or a shape including them, into the valley of a wave absorber (first wave absorber), thereby adjusting the amount of a dielectric loss film existing in a certain space and the frequency characteristics of wave absorption.SELECTED DRAWING: Figure 1 |
