SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

The objective of the present invention is to provide a semiconductor device capable of offering excellent electrical performance and securing expanded areas of safe operation. The semiconductor device comprises: a substrate with a first conductive active area; a second conductive drift area formed in the active area; a second conductive drain area with a gate covering the active area on the drift area; a gate insulation film arranged between the active area and gate; a second conductive drain area with a higher doping concentration than the drift area, arranged apart from the gate in the drift area; a first conductive shallow well area arranged between the gate and drain area in the drift area; and a first conductive source area, arranged between the gate and drain area, in the first conductive shallow well area, with a higher doping concentration than the first conductive shallow well area.