发明名称 ERROR CORRECTION METHOD OF MEMORY DATA
摘要 According to the present invention, a memory data error correction method comprises: a step of receiving a burst-specific content from each of multiple bursts of a memory module; a step of storing the burst-specific content from each of the multiple bursts; and a step of using all error correction code (ECC) beats received as a part of a single error correction double error detection (SECDED) code from at least one of the multiple bursts to correct at least one error included in the first predetermined number of beats of burst-specific data. The burst-specific content includes the first predetermined number of beats of the burst-specific data as well as corresponding beats of a burst-specific ECC. According to the present invention, error correction performance can be improved even by using existing SECDED circuitry.
申请公布号 KR20160054395(A) 申请公布日期 2016.05.16
申请号 KR20150127743 申请日期 2015.09.09
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 HU CHAOHONG;ZHENG HONGZHONG;NAIR PRASHANT JAYAPRAKASH
分类号 G06F11/10;G06F13/28 主分类号 G06F11/10
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