CLEANING METHOD FOR SEMICONDUCTOR DEVICE FABRICATION

摘要

A method for cleaning a substrate such as a semiconductor substrate to manufacture an integrated circuit is described. The method for cleaning a substrate includes: cleaning the semiconductor substrate with a first mixture of ozone and any one from an acid and a base, and subsequently spraying a second mixture of ozone and the other one from the acid and the base. Cleaning mixtures can further include deionized water. In an embodiment of the present invention, the mixture is sprayed on a surface of a heated substrate. The acid can be HF, and the base can be NH_4OH, thereby reducing an environmental effect due to chemical usage.