发明名称 CHARGED PARTICLE BEAM LITHOGRAPHY DEVICE, LITHOGRAPHY METHOD USING CHARGED PARTICLE BEAM, AND SHOT CORRECTION METHOD IN CHARGED PARTICLE BEAM LITHOGRAPHY
摘要 PROBLEM TO BE SOLVED: To provide a charged particle beam lithography device capable of easily reducing an XY dimension variation amount in a fine pattern to be formed in a member to be patterned over all the surface of the member to be patterned by transferring a latent image of the fine pattern to the member to be patterned when drawing the latent image in a resist layer in a specimen where the resist layer is formed on the member to be patterned, with a charged particle beam.SOLUTION: A shot data creation processing device 32 is provided for creating shot data of shots with which the resist layer should be irradiated while using correction information for a shot cross section size and a shot irradiation position obtained from in-plane distribution data of the XY dimension variation amount at the time when a number of dimension measurement patterns are formed under a predetermined condition on a test sample having a layer constitution corresponding to the specimen on which the latent image should be drawn, and design data of the fine pattern.SELECTED DRAWING: Figure 1
申请公布号 JP2016082131(A) 申请公布日期 2016.05.16
申请号 JP20140213726 申请日期 2014.10.20
申请人 NUFLARE TECHNOLOGY INC 发明人 MOTOSUGI TOMOO
分类号 H01L21/027 主分类号 H01L21/027
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