ELECTRODE FORMING METHOD AND ELECTRODE STRUCTURE

摘要

PROBLEM TO BE SOLVED: To provide an electrode forming method capable of easily obtaining an excellent Schottky junction to evaluate electric characteristics of a semiconductor silicon wafer using the Schottky junction between the semiconductor silicon wafer and an Al electrode.SOLUTION: An electrode forming method comprises: a step S1 of preparing a p-type semiconductor silicon wafer; a step S2 of performing heat treatment for forming a level of a measuring object element in the semiconductor silicon wafer as required; a step S3 of removing the oxide film formed by the heat treatment by cleaning a surface of the semiconductor silicon wafer by HF treatment; a step S4 of forming a thin oxide film on the surface of the semiconductor silicon wafer by heat-treating the semiconductor silicon wafer in the atmosphere using a hot plate, heat treatment being performed at 50°C to 250°C for about 5 to 10 minutes; a step S5 of forming an Al electrode on the oxide film; and a step S6 of forming an ohmic electrode on a rear surface of the semiconductor silicon wafer using Ga and the like.SELECTED DRAWING: Figure 1