发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME, AND MODULE AND ELECTRONIC EQUIPMENT |
摘要 |
PROBLEM TO BE SOLVED: To provide a transistor having stable electric characteristics, or to provide a transistor having normally-off electric characteristics.SOLUTION: A semiconductor device comprises a conductor, a semiconductor, a first insulator, and a second insulator. The semiconductor is arranged on the first insulator. The conductor is arranged on the semiconductor. The second insulator is arranged between the conductor and the semiconductor. The first insulator contains fluorine and hydrogen. A fluorine concentration of the first insulator is higher than a hydrogen concentration thereof.SELECTED DRAWING: Figure 1 |
申请公布号 |
JP2016082241(A) |
申请公布日期 |
2016.05.16 |
申请号 |
JP20150205990 |
申请日期 |
2015.10.20 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
YAMAZAKI SHUNPEI;SHIMOMURA AKIHISA;YAMANE YASUMASA;YAMADE NAOTO;TANAKA TETSUHIRO |
分类号 |
H01L21/336;G02F1/1368;H01L21/265;H01L21/425;H01L21/477;H01L21/8234;H01L27/088;H01L29/786;H01L51/50;H05B33/06;H05B33/10;H05B33/14 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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