| 摘要 |
PROBLEM TO BE SOLVED: To provide a processing method for a silicon substrate that can suppress thin silicon and a film structure of an intermediate layer from being broken in etching of first and second silicon substrates.SOLUTION: In the processing method for a silicon substrate, in a joining step, an intermediate layer 103 having an opening part 110 is interposed between a first silicon substrate 101 and a second silicon substrate 102 and both silicon substrates are joined to each other. In a charging step, a closed space formed by at least one silicon substrate of the first and second silicon substrates and the opening part is charged at least partially with a filling part. Further in an etching step, a liquid supply port is formed which penetrates through the first silicon substrate, the charging part in the opening part and the second silicon substrate.SELECTED DRAWING: Figure 1 |
