METHOD FOR ETCHING MULTILAYERED FILM

摘要

PROBLEM TO BE SOLVED: To enable the removal of a deposit sticking to a surface having a geometry formed by etching.SOLUTION: A method according to an embodiment comprises the steps of: (a) etching an upper magnetic layer by plasma generated in a process chamber, in which the etching of the upper magnetic layer is terminated at a surface of an insulator layer; (b) removing deposits formed on surfaces of a mask and the upper magnetic layer as a result of the etching of the upper magnetic layer by plasma generated in the process chamber; and (c) etching the insulator layer by plasma generated in the process chamber. In the deposit removing step, a pulse-modulated DC voltage as a bias voltage for drawing in ions is applied to a support structure holding an object to be processed while tilting and rotating the support structure.SELECTED DRAWING: Figure 13