发明名称 PRODUCTION METHOD OF MATERIAL FOR SEMICONDUCTOR LITHOGRAPHY AND PRODUCTION DEVICE THEREOF
摘要 PROBLEM TO BE SOLVED: To provide a production method with which a material for semiconductor lithography having reduced metal impurity concentration can be produced, and a production device thereof.SOLUTION: In a production method of a material for semiconductor lithography, which is a polymer for semiconductor lithography, a solution of the polymer, or a composition including the polymer, the production method of the material for semiconductor lithography includes a step to feed a liquid material with a feed pipe formed by connecting a plurality of piping members, and a connection member selected from a group of (1)-(3) is provided on a part where the piping members are connected with each other in the feed pipe: (1) a connection member composed of a perfluoroelastomer, (2) a connection member composed of a fluororubber, and (3) a connection member formed by coating a surface of a rubber substrate with a perfluoro resin.SELECTED DRAWING: None
申请公布号 JP2016079296(A) 申请公布日期 2016.05.16
申请号 JP20140212673 申请日期 2014.10.17
申请人 MITSUBISHI RAYON CO LTD 发明人 KATO KEISUKE
分类号 C08F2/01 主分类号 C08F2/01
代理机构 代理人
主权项
地址