发明名称 PROCESSING SYSTEM CONTAINING AN ISOLATION REGION SEPARATING A DEPOSITION CHAMBER FROM A TREATMENT CHAMBER
摘要 The present invention discloses a method and an apparatus for processing a substrate in a processing system including a deposition chamber, a process chamber and an isolation region which separates the deposition chamber from the process chamber. The deposition chamber deposits a film on a substrate. The process chamber accommodates the substrate from the deposition chamber, and changes the film deposited by the deposition chamber by using a film characteristic change device. Provided are processing systems and methods according to the embodiment and other embodiments. So, an improved semiconductor processing system suitable for successive deposition and processing can be provided.
申请公布号 KR20160054420(A) 申请公布日期 2016.05.16
申请号 KR20150155113 申请日期 2015.11.05
申请人 APPLIED MATERIALS, INC. 发明人 JANAKIRAMAN KARTHIK;MALLICK ABHIJIT BASU;PONNEKANTI HARI K.;SRIRAM MANDYAM;DEMOS ALEXANDROS T.;SRINIVASAN MUKUND;ROCHA ALVAREZ JUAN CARLOS;DUBOIS DALE R.
分类号 H01L21/205;H01L21/203;H01L21/67 主分类号 H01L21/205
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