| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for improving etching durability of an EUV resist and mitigating pattern collapse.SOLUTION: In the method, a first patterned layer is composed of a resist material having (i) material properties that provide lithographic resolution of less than 40 nanometers when exposed to extreme ultraviolet (EUV) radiation lithography, and (ii) material properties that provide a nominal etch resistance to an etch process condition selected to etch a material layer below the first patterned layer (S312). The method further includes: a step (S314) of over-coating the first patterned layer with an image reversal material such that the image reversal material fills and covers the first patterned layer; a step (S316) of removing an upper portion of the image reversal material such that top surfaces of the first patterned layer are exposed; and a step (S318) of removing the first patterned layer such that the remaining image reversal material gives a second patterned layer.SELECTED DRAWING: Figure 3 |
