| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film transistor which has a gallium-free oxide semiconductor layer and high mobility; and provide a manufacturing method of the thin film transistor.SOLUTION: A thin film transistor 10 which has a gate electrode 2, a gate insulation layer 3, an oxide semiconductor layer 4, a source electrode 5 and a drain electrode 6, in which the oxide semiconductor layer 4 is formed by indium tungsten zinc oxide. It is preferable to achieve the thin film transistor 10 in which the indium tungsten zinc oxide contains WOwithin a range of 5.0-15.5 mass%. It is preferable to achieve the thin film transistor 10 in which the indium tungsten zinc oxide contains ZnO within a range of 0.2-0.8 mass%.SELECTED DRAWING: Figure 1 |
