| 摘要 |
PROBLEM TO BE SOLVED: To provide an IGBT capable of suppressing oscillation in short circuit, and of achieving a low on-resistance and a low switching loss.SOLUTION: A semiconductor device has a base region and a plurality of trench gates penetrating through the base region, on a surface layer at a principal surface side of a semiconductor substrate. The semiconductor device comprises: a channel part in which an emitter region is formed on a principal surface side surface layer so as to be contacted with the trench gates, and a channel is formed in the base region; and a decimation part in which no emitter region is formed, and thus, no channel is formed. The trench gates form a main trench gate group formed in the channel part, and a dummy trench gate group formed in the decimation part. The dummy trench gate group has an equipotential trench gate whose potential is set to be the same as that of the trench gates forming the main trench gate group, and a non-equipotential trench gate whose potential is set to be different from that of the main trench gate.SELECTED DRAWING: Figure 1 |
